Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide

نویسندگان

چکیده

Spin defects in solid-state sensors are a highly promising platform for quantum sensing, field with far-reaching applications variety of industries. Here, we investigate the magnetic sensitivity spin defect ensemble detected electrically silicon carbide pn-junction diode utilizing hyperfine-induced spin-mixing effect observed vicinity zero field. To enhance baseline sensitivity, employ above bandgap optical excitation to generate additional electron-hole pairs as well balanced detection scheme reject common-mode noise, an ultimate 30 nT/Hz achieved. Both techniques demonstrated greatly device by total factor ∼24, paving way toward sub-nanotesla sensitivities electrical detection.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2023

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0154382